Abstract
Ion-induced photon emission (IPE) during bombardment of magnesium aluminate spinel crystals MgO· nAl 2O 3 by 20 keV Ar + ions was studied. The dependence of the yield of particles in specific excited states on the fluence of incident ions in the range of (0.1–1.6)×10 17 ions/cm 2 was measured. It was shown that yield of magnesium and aluminum atoms and ions in most excited states do not depend (or slightly depend) on the fluence of ion bombardment. An exception was found for yields of Mg + ions in the 4s 2S excited state and Al atoms in the 5p 2P 0 excited state leading to emission lines at 292.8 and 669.6 nm, respectively. The yield of particles in these excited states drastically decreases at the start of ion bombardment. Analysis of these results and published data on the bombardment-induced surface modification of spinel crystals allows to elucidate the role of crystal structure and chemical bonding in the formation of some excited states. The dependence of excited state yield (except of Mg and Al indicated above) from spinel crystals of different composition MgO· nAl 2O 3 ( n=1.0, 1.5, 2.0, and 2.5) does not reflect quantitatively the variation of the calculated bulk concentration of constituent atoms in these targets.
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