Abstract
The effects of antimony incorporation and a convex compositional step-gradient on the surface morphology, defect generation, and defect propagation properties of InAs y P 1− y metamorphic buffer layers (MBLs) were investigated. The incorporation of Sb reduces the root-mean-square (RMS) of the surface roughness, and complete elimination of the arsenic from the MBL (i.e. InP z Sb 1− z ) leads to a reduction of RMS values of the surface roughness from 16 nm (InAs y P 1− y ) to 3.4 nm (InP z Sb 1− z ), without noticeably altering the defect density in the upper layers of the MBL. InP 1− x Sb x layers grown on an InP z Sb 1− z MBL have reduced hillock formation and exhibit energy bandgaps within 8% of that expected from theory.
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