Year-end Sale % OFF 
Abstract
The effects of antimony incorporation and a convex compositional step-gradient on the surface morphology, defect generation, and defect propagation properties of InAs y P 1− y metamorphic buffer layers (MBLs) were investigated. The incorporation of Sb reduces the root-mean-square (RMS) of the surface roughness, and complete elimination of the arsenic from the MBL (i.e. InP z Sb 1− z ) leads to a reduction of RMS values of the surface roughness from 16 nm (InAs y P 1− y ) to 3.4 nm (InP z Sb 1− z ), without noticeably altering the defect density in the upper layers of the MBL. InP 1− x Sb x layers grown on an InP z Sb 1− z MBL have reduced hillock formation and exhibit energy bandgaps within 8% of that expected from theory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
