Abstract
Electrical characterizations of a metal-ferroelectric-insulator-semiconductor field effect transistor (MFISFET) using Au/Bi 3.25La 0.75Ti 3O 12/Si 3N 4/Si(1 1 1) were investigated by studying the effects of the annealing conditions. Ferroelectric Bi 3.25La 0.75Ti 3O 12 (BLT) was prepared on 15 nm Si 3N 4 coated p-type Si(1 1 1) substrates by the pulsed laser deposition method at a deposition temperature of 400 °C and an oxygen pressure of 200 m Torr. The crystalline structures showed polycrystalline films with preferable c-axis orientations at higher annealing temperatures. The capacitance–voltage ( C– V) measurements for the as-deposited films, 600 and 700 °C annealed films showed a decreasing memory window value of 1.31, 0.78, and 0.36 V, respectively. The generation of low coercive values for higher annealed films is known to be the main cause for such results.
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