Abstract
An improved theoretical model on the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) has been proposed by considering the history-dependent electric field effect and the mobility model. The capacitance–voltage (C–V) characteristics of MFIS structure is evaluated by combining the switching physics of ferroelectric with the silicon physics, and the drain current-gate voltage (ID-VGS) and drain current-drain voltage (ID-VDS) characteristics of MFIS-FET are modeled by combining the switching physics of ferroelectric with Pao and Sah’s double integral. For two MFIS-FETs with SrBi2Ta2O9 and (Bi,La)4Ti3O12 ferroelectric layers, the C–V, ID-VGS and ID-VDS characteristics are simulated by using the improved model, and the results are more consistent with the previous experiment than those based on Lue model, indicating that the improved model is suitable for simulating the electrical characteristics of MFIS-FET. This work is expected to provide some guidance to the design and performance improvement of MFIS structure devices.
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