Abstract
The effects of silicide formation on the surface structure and magnetic properties of Co thin films on Si (100) were investigated. Annealing temperature significantly changed the formation of silicide. CoSi phase was formed during annealing at 600 °C and 700 °C. CoSi2 phase was formed during annealing at 800 °C. The anisotropy of Co/Si (100) films changed due to the formation of silicide. In addition, both the particle size and the surface roughness increased with the increase of annealing temperature, which led to the increase of coercivity up to 700 °C. However, the better crystallinity $ {H_{C}}$ decreased at 800 °C.
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