Effects of annealing on the microstructure and performance of thin-film Pt resistance temperature sensors: experiments and finite element simulations

Abstract

Platinum resistance temperature sensors have a wide range of applications in various fields, where a high temperature coefficient of resistance (TCR) is a crucial requirement. In this study, thin-film Pt resistance temperature (TPRT) sensors were fabricated on an Al2O3 substrate using a micro-electro-mechanical system (MEMS) based surface micromachining process, and Pt resistance wafers were annealed at a temperature range from 500°C to 800°C using rapid thermal process (RTP). Experimental and simulation results show that TPRT sensors fabricated on the substrate with a rough surface exhibit lower thermal stress. Meanwhile, more pores appear in the Pt thin film, reducing TCR. However, high temperature annealing significantly influences the microstructure of the Pt film and brings about an obvious increase in TCR despite, introducing thermal stress at the interface. Considering the impact of the heat treatment process, the fabricated TPRT sensors demonstrate excellent performance with a TCR of 3512 ppm/°C.