Abstract
CuInxGa1−xSe2 (CIGSe) thin films have been deposited by magnetron sputtering from a CIGSe target and annealed in Se (Selenium) vapor atmosphere. Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD), Raman, X-ray Fluorescence (XRF), Hall tester were used to observe and analyze the compositions, microstructures, surface morphologies and electronic properties of the films. After annealing, the performance of CIGSe films can be improved. The crystalline quality and electronic properties of annealed CIGSe films changed when the annealing temperature increases up to 350°C. CIGSe film with single chalcopyrite structure can be obtained when annealing temperature increases up to 400°C for 120 minutes. Se could be added into the thin films while annealing in Se vapor atmosphere. Cu-Se phase forms at the beginning of annealing and decreased with the increase of annealing time. In this work a cell with efficiency of 7.69% based on the sputtered and annealed CIGSe absorber was obtained.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
