Abstract
In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO2 charge trapping layer annealed at 950 °C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO2 show great promise for future industrial flash memory applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
