Abstract
The recent progress on investigation of the effects of external magnetic field on shallow impurity centers in semiconductors is discussed. As an example, the shallow donor levels of phosphorus in ultra pure silicon are investigated under magnetic fields and by use of photothermal ionization spectroscopy(PTIS). By selecting the configuration of B∥∥ kββ 〈100〉, the linear and quadratic Zeeman splittings of phosphorus donor states are observed. By selecting the configuration of B∥∥k∥∥ 〈111〉, the anticrossing between hybridized Zeeman states and the intensity evolution of Zeeman transitions near the anticrossing region are observed and measured quantitatively, which, in turn, gives the measurement of wavefunction composition and their evolutions with magnetic fields fox the hybridized Zeeman states of bounded electrons of impurities. An extension of Faulkner's method is made and a variational calculation in the framework of the effective mass approach(EMA) is performed to estimate theoretically the effects of magnetic fields on shallow donor levels and impurity transitions, especially to estimate the wave function compositions of hybridized states. A comparison has been made between the theoretical and experimental results.
Published Version
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