Abstract
Abstract Thin n-type ZnO films doped with different atomic concentrations of aluminium were grown by filtered vacuum arc deposition (FVAD) on glass substrates. The films were deposited using an oxygen working pressure of 2.0 mTorr with an arc current running at two 100 ms pulses s−1. Structural, optical and electrical properties were investigated to understand the effect of Al doping on ZnO films. The best values were found for an ideal aluminium percentage between 4 and 6 at.%.
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