Abstract
Abstract We fabricated InAsP quantum dots on GaInP lattice-matched to GaAs (0 0 1) using three types of growth sequences by the droplet hetero-epitaxy. By changing group-V ambient before In droplets formation, we investigated the effects of absorbed group-V atoms on the lateral size, height, density, and luminescence intensity of InAsP quantum dots. By supplying tertiarybutylphosphine and tertiarybutylarsine mixed gases before In droplets formation, the lateral size and height of dots decreased, and the luminescence intensity increased by 550 times. It was revealed that the group-V ambient before In droplets formation was very important for the lateral size, height, and the luminescence intensity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
