Abstract
P-type ZnO film was obtained by N-implantation at energy of 120keV with annealing at 850°C in oxygen. Room temperature Hall effect measurements revealed that the carrier concentration and mobility was 9.95×1018cm−3 and 14.3cm2/vs, respectively, in the implanted ZnO with optimal fluence of 1015N/cm2, where more N acceptors were activated as confirmed by X-ray diffraction and photoluminescence. The increase of lattice constants and appearance of emission peaks at 3.26 and 3.18eV after implantation indicated that the p-type ZnO was realized by substitution of N atom for O sublattice.
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