Abstract
We report the use of hydrogen annealing to implement the substantial recovery of the a-face (1 1 2¯ 0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.
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