Abstract
SiC MOSFET has received widespread attention for its superior characteristics in comparison with traditional silicon devices. However, fast switching of SiC MOSFET causes undesirable switching oscillations. In this paper, mitigating switching oscillation by changing driver parameters is firstly investigated through experiments. Results show that higher gate resistance and lower drive voltage can reduce oscillation but introduce high switching loss. Afterwards, switching oscillation damping with RC snubber is studied with respect to loss increment and damping effect. Snubber experiments have been conducted with both SiC MOSFET discrete device and module device. The oscillation damping effectiveness with two methods and different devices is compared.
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