Effective Strategies for Current Boosting in a Mesa-Shaped In-Ga-Zn-O Vertical-Channel Thin-Film Transistor with a Short-Channel Length of 40 nm

Abstract

To improve the device characteristics of the mesa-shaped vertical thin-film transistors (VCTs) with channel lengths (LCH) below 100 nm, using In-Ga-Zn-O (IGZO) channels prepared with atomic layer deposition (ALD), we...