Abstract
Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage induced by energetic Ga + ions. An effective method of removing the surface damage is demonstrated using a plasma cleaner, a device which is widely used to minimize the surface contamination in scanning transmission electron microscopy (STEM). Surface bombardment with low-energy Ar + ions was induced by biasing the sample immersed in the plasma source, so as to etch off the surface materials. The etch rates of SiO 2, measured with a bias voltage of 100–300 V, were found to vary linearly with both the time and bias and were able to be controlled from 1.4 to 9 nm/min. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS) after the plasma processing of the FIB-prepared sample. When the FIB-prepared sample was processed via plasma etching for 10 min with a bias of 150 V, the surface Ga damage was completely removed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
