Abstract
A novel internal-type linear inductive antenna referred to as “double comb-type antenna” was used for a large-area plasma source with the substrate area of 880mm×660mm and the effect of plasma confinement by applying multi-polar magnetic field was investigated. High-density plasmas on the order of 3.18×1011cm−3, which is 50% higher than that obtained for the source without the magnetic field, could be obtained at the pressure of 15mTorr Ar and at the inductive power of 5000W with good plasma stability. The plasma uniformity less than 3% could also be obtained within the substrate area. When SiO2 film was etched using the double comb-type antenna, the average etch rate of about 2100Å∕min could be obtained with the etch uniformity of 5.4% on the substrate area using 15mTorr SF6, 5000W of rf power, and −34V of dc bias voltage.
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