Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)

Abstract

The as-grown single crystalline Gd2O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2O3∕Si(100) interface. The instability of flatband voltage and hysteresis of Pt∕Gd2O3∕Si and W∕Gd2O3∕Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011∕cm2eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.