Abstract
In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior.
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