Abstract
The authors report a new and accurate numerical calculation of the excited states of shallow defects in semiconductors, associated with simple ellipsoid energy bands. They use the reduced-matrix-element technique to eliminate the angular part of the effective-mass equation, and the resulting set of radial differential equations is solved variationally. They present the calculated energy levels as a function of the anisotropy parameter gamma =m*perpendicular to /m*/sub ///, covering both the cases of prolate and oblate ellipsoid bands. The former case (0 1) applies, for example, to the problem of shallow acceptors in cubic semiconductors in the limit of very high uniaxial stress applied to the sample parallel to a (001) or a (111) direction. It is of considerable theoretical interest, and is treated here for the first time in a systematic way. Where a comparison with experiment is possible, they find a very close agreement in this case too.
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