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Abstract
Effective mass calculation of the acceptor ground state g-factor is presented for two limiting cases: infinite and zero spin–orbit coupling. Simple analytical expressions for the g-values are obtained within the framework of the zero-radius potential model. These results are in good agreement with experimental data for GaAs. Analytical expressions for the tensor g-factor are presented for strained wide-bandgap semiconductors with weak spin–orbit interaction (such as GaN). These results can be used for qualitative analysis of ODMR and ESR experimental data.
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