Abstract

The concept of effective intervalley deformation potentials (IDPs) has been introduced to account for the k -dependence of the IDPs under actual experimental conditions. These effective IDPs obtained in GaAs, from the Γ L and Γ X scattering times, calculated using a theoretical description of the electron-phonon interaction in the rigid pseudo-ion approximation, compare well with different experimental results. This explains the wide range of experimental values of the IDPs quoted in the literature and is also useful in model simulations of the dynamics of hot-electron phenomena.

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