Abstract
Rapid tunnelling junction formation is a much crucial issue with conventional sub-nanometre tunnel field-effect transistor (TFET) to obtain improved electrostatics characteristics. This task becomes more problematic and complicated for dopingless TFET as a result of wide tunnelling barrier at channel/source junction. In this regard, a new approach has been employed by implanting the metal angle (MA) inside the dielectric layer near channel/source joint to obtain enhanced electrical behaviour of the proposed structure. Employment of MA of small work-function increases electron density at channel/source interface to have improved electron tunnelling rate. Work-function optimisation of MA on RF/DC parameters is analysed in device optimisation part of this work. Simultaneously length optimisation of MA is also presented in the device optimisation section to ease the complex fabrication steps. In addition to these, circuit level performance of proposed and conventional structures is also analysed in this study.
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