Abstract
We examined electrical creation of spin-polarized carriers in heavily doped p-type Ge from a Fe/GeO2 tunnel contact where GeO2 is an amorphous insulator. Clear spin accumulation signals were successfully observed up to 300 K down to a very low voltage of 1 mV. In contrast to epitaxial Fe/MgO tunnel contact, the magnitude of spin accumulation signal exhibits a nearly symmetric behavior with respect to the bias voltage polarity. These results establish that GeO2 is an effective tunnel barrier for spin injection and detection in germanium.
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