Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection

Abstract

We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the single crystalline CoFe(5.0 nm)/MgO/n-Ge(001) tunnel contacts with an ultrathin MgO thickness of 1.5, 2.0, and 2.5 nm have been investigated by the I-V-T and C-V measurements. Interestingly, the crystalline tunnel contact with the 2.0-nm MgO exhibits the Ohmic behavior with the RA products of 5.20×10−6/1.04×10−5 Ω m2 at ±0.25 V, satisfying the theoretical conditions required for significant spin injection and detection. We believe that the results are ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.