Abstract
Amorphous Li–Nb–O films were deposited onto Si substrates by radio-frequency magnetron sputtering method. The fabricated heterostructures demonstrated the presence of effective oxide charge Qeff having both negative and positive components. Thermal annealing (TA) of as-grown heterostructures leads to the crystallization of a Li–Nb–O system with the formation of LiNbO3 films. The Qeff changes with TA, reaching a minimum at the annealing temperature of about 470°C, corresponding to the entire film’s crystallization.
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