Abstract
Electrical measurements of the equilibrium np product (n2ie) in heavily doped n- and p-GaAs were performed. The n2ieD product (where D is the diffusivity) was measured by fitting the collector current-voltage characteristic of a homojunction bipolar transistor to an ideal diode equation modified to account for transport in thin base transistors. The n2ie product was then extracted from n2ieD by utilizing diffusivity results obtained with the zero-field time-of-flight technique. Our results show significant effective band-gap shrinkage in heavily doped p-GaAs, and very little effective band-gap shrinkage in heavily doped n-GaAs. At extremely heavy dopings, an effective band-gap widening is observed for both n- and p-GaAs and is attributed to the effects of degeneracy.
Highlights
Electrical measurements of the equilibrium np product in heavily doped n- andp-GaAs were performed
The nFeD product was measured by fitting the collector current-voltage characteristic of a homojunction bipolar transistor to an ideal diode equation modified to account for transport in thin base transistors
The n:C product was extracted from nf$ by utilizing diffusivity results obtained with the zero-field time-of-flight technique
Summary
Electrical measurements of the equilibrium np product (ni2,) in heavily doped n- andp-GaAs were performed. S.; Melloch, Michael R.; and Lundstrom, Mark S., "Effective Bandgap Shrinkage in GaAs" (1994).
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
