Effect on electrical properties of CuI thin film prepared by a spin coating technique

Abstract

Copper Iodide (CuI) is a p-type semiconductor that is an inorganic semiconductor with significant applications in the thin film. It has potential application in solar cells as a hole transport layer, done by spin coating technique with annealing. The Hall-measurement system investigated the different annealing temperatures of solution-processed CuI thin films. The CuI thin films were p-type semiconductors with resistivities of 0.5–7.4 Ω cm, a carrier concentration of ∼ 1019 cm−3, and mobility of < 24 cm2 V−1 s−1, respectively. It was found that by increasing the annealing temperature above 220 °C, the resistivity of CuI thin films also decreased.