Abstract
CaCu3Ti4O12–xWO3 (CCTO–xWO3) (x = 5, 10, 15, 20 wt%) ceramic composites were synthesized using conventional mixed oxide method. The effect of various amounts of WO3 loading on its microstructure, electrical and dielectric properties of CCTO ceramic composites were studied using XRD, FESEM-EDAX, Hall effect and dielectric measurement. XRD analysis revealed that the CCTO–xWO3 ceramic composites have cubic structure and WO3 loading had no effect on its crystal phase structure. The FESEM analyses showed that the samples had a porous structure. It is noted that the porosity of CCTO films increased from 2.97% to 6.11% with 20% wt. WO3 loading. Also, the electrical resistivity and dielectric permittivity of CCTO ceramics was reduced with increasing WO3 loading. Particularly, the CCTO–20 wt% WO3 ceramic composites exhibited the lowest electrical resistivity (81 Ω cm) and dielectric permittivity (486 measured at 1 kHz) but the highest dielectric loss (0.6 measured at 1 kHz). These results have practical implication for fabrication and optimizing of CCTO ceramics for low power loss microelectronics.
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