Abstract

Lanthanum-modified BaTiO3 electroceramic materials have superior dielectric and piezoelectric properties. Ba0.996La0.004Ti0.999O3 (BLT4) seems to be a serious candidate for ultracondensator applications. This manuscript describes the results of hafnium and europium modification of BLT 4 ceramics. The pure and doped ceramic materials were synthesized by the conventional mixed oxide method. The microstructure of obtained samples was examined by scanning electron microscope. The investigations reveal strong correlations between the presence of admixture and the grain size, which was especially visible in the case of the hafnium dopant. The frequency and temperature dielectric characteristics measurements revealed a decrease in electric permittivity. Moreover, the impedance spectroscopy investigations showed severe changes in grains and grain-boundary resistivity, which was connected with changes in electric conductivity.

Highlights

  • Ba0.996 La0.004 Ti0.999 O3 CeramicsSemiconductor ferroelectric ceramics with a perovskite-type structure are an interesting group of materials because of their wide application possibilities [1,2]

  • The of the the obtained obtainedceramic ceramicmaterials materialswere were tested using a scanning electronmicroscope microscope(Figure

  • TheThe results showed that pure were charactercharacterized by well-shaped grains. surface

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Summary

Introduction

Semiconductor ferroelectric ceramics with a perovskite-type structure are an interesting group of materials because of their wide application possibilities [1,2]. As the stoichiometric formula states, trivalent lanthanum ions are substitutes for subnet A in the perovskite structure, replacing divalent barium ions and disrupting the balance of the electric charges. This equilibrium must be kept by creating cationic vacancies (ion compensation) or by adding an additional electron (electron compensation) [22,23]. With this amount of dopant, the dielectric permittivity at room temperature was equal to over 40,000, and its maximum value exceeded 100,000 at the phase transition temperature Ceramics with such excellent dielectric properties are undoubtedly one of the most promising materials for application in ultracapacitors. The research results presented in this article have been supplemented with microstructural analysis

Experiment
3.3.Results
Complex-plane impedance ramics concerned
Conclusions
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