Effect of wire diameter on structure and electrical properties of (Al + Al2O3)-sheathed MgB2 with Nb barrier

Abstract

Effect of wire diameter and annealing on the properties of internal magnesium diffusion (IMD)-processed MgB2 composite wires is studied by establishing a correlation with the characteristics of the interfacial reaction zones developed at Mg − B and barrier (Nb) – sheath (Al + Al2O3) interfaces. The MgB2 superconductor phase grows at the Mg − B interface along with the B-rich MgB4 phase. Formation of MgB2 prior to MgB4 is anticipated owing to a relatively lower Gibbs free energy at annealing temperatures studied. An intermetallic NbAl3 phase has developed at the barrier – sheath interface whose thickness decreases with an increase in the wire diameter. Development of NbAl3 further provides mechanical reinforcement and aids at yielding a dense superconductor phase. Resistivity – voltage characteristics of wire indicates the formation of MgB2 through a huge drop in resistivity values across the core of the wire. An annealing temperature of 645 °C near the melting point of pure Mg (650 °C) and annealing time of 120 min results in highest critical current of the MgB2 wire. Annealing time beyond 120 min has shown an impediment to the flow current due to crack propagation possibly because of accumulation of stresses within the developed superconductor phase due to grain growth. A significantly greater resistance for the wire with the smallest diameter is attributed to the formation of a thicker NbAl3 phase. However, highest engineering current density has also been attained by the wire with the smallest diameter annealed at 645 °C for 60 min.