Abstract
The effect of vacuum annealing on the thermal stability and phase transition of Ti3SiC2 has been investigated by X‐ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti3SiC2 undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti5Si3Cx that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum‐annealed Ti3SiC2 by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti5Si3Cx with depth.
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