Abstract
An investigation of the effect of UV illumination with relatively high doses on the electrical properties of MOS structures is carried out. It is found that besides negative oxide charge, two kinds of surface states could be created, one of them (S-II) having anomalous shape of dose dependences (S-like curves) and specific distribution over the Si band gap. The annealings of the created states allow to determine the activation energies for both kinds of centres. The analysis of the kinetics of this defect formation allows to conclude that for the creation of S-II (in distinction from S-I) complicated (multistage) reactions are necessary. [Russian Text Ignored].
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