Abstract
P-type polyaniline (PANI)/n-type ZnO based heterojunction is fabricated and the effect of continuous ultraviolet (UV) exposure on its current–voltage (I–V) characteristics is investigated. The I–V characteristics of PANI/ZnO showed diode-like behavior under dark condition and its ideality factor and barrier height were obtained as 1.54 and 1.35 eV, respectively. For immediate UV exposure the diode showed photo-characteristics, however, during continuous UV exposure diode characteristics started to change with exposure time. After sufficient exposure time characteristics became stable and the ideality factor and barrier height after UV exposure were obtained as 7.94 and 0.92 eV, respectively. It is proposed that the permanent physical changes in PANI film during UV exposure are responsible to change the rectifying behavior. It is found that after 10 min of continuous exposure the PANI film stabilizes and the PANI/ZnO junction shows stable characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
