Effect of uniaxial stress on the radiative recombination in doped germanium

Abstract

We have studied the effect of uniaxial stress along (111), (110), and (100) on the recombination line of a donor-bound electron with a free hole in Ge. The shift of the energy levels with pressure follows the theoretical predictions. The variation of the ratio of the phonon assisted and zero-phonon line intensities allows us to test a model for the calculation of the zero-phonon line intensity.