Abstract
The growth velocity of silicon ⟨110⟩ faceted dendrites as a function of the twin spacing was investigated by in situ observation. As the twin spacing increases, ⟨110⟩ dendrite growth velocity nonlinearly decreases. The theoretical ⟨110⟩ and ⟨112⟩ dendrite growth velocities were calculated on the basis of the modified re-entrant corner model, and the theoretical growth velocity of ⟨112⟩ dendrites was found to be slower than that of ⟨110⟩ dendrites under the same twin spacing. The theoretical ⟨110⟩ dendrite growth velocity fits quite well with the experimental results.
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