Abstract
This paper deals with the effect of traps on the domain velocity (u 0) and total current (j s) in the presence of steadily travelling high field domains. The treatment is applicable both for the Watkins—Gunn effect and recombination instability. The calculations are carried out without linearization of the related equations, using the method proposed in [9] for the trap-free case. The assumptions used are: (i) Only transitions leading to negative differential conductivity depend on the electric field; (ii) The relaxation times of transitions between high and low mobility states are shorter than the other characteristic times of the problem; (iii) The mobilities and diffusion coefficients are field independent; (iv) The electron concentration in the band is much lower than those of empty and filled centres.
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