Abstract
HighlightsWe demonstrated forming-free switching using atomic layer deposited HfTiOx nanolaminate.Effect of Hf:Ti ratio and anneal conditions on switching characteristics were studied.Multi-level operation with four distinct levels and stable retention were observed. In this work, we investigate the effects of the Hf:Ti ratio and annealing temperature on the properties of forming-free resistive memories with atomic layer deposited (ALD) HfTiOx nano-laminate. Devices with 25% Ti doping (Hf:Ti=3:1) in the dielectric show reliable forming-free switching while 50% Ti doped samples (Hf:Ti=1:1) remain conducting at all applied voltages. No significant effect of annealing was observed on the switching characteristics of the devices. The forming-free devices show capability to operate without any external or on-chip transistor and exhibit multi-level capability with four distinct levels and stable retention for all the levels.
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