Abstract
We successfully fabricated a-IGZO TFTs with a Ti/Cu source/drain (S/D) in order to reduce the data-line resistance. SiNx passivation was used to protect the Cu from Cu-oxygen diffusion. The TFTs exhibited normal enhancement-mode characteristics compared to the TFT employing a Mo S/D, which behaved like a conductor. Our experiments suggest that the Ti/Cu S/Ds control the channel resistivity of the fabricated TFT lower than the Mo case. We found an indium-deficient IGZO layer under the Ti contact; this is thought to be the origin which reduces oxygen vacancy concentration in the channel. © 2012 The Electrochemical Society. [DOI: 10.1149/2.003205esl] All rights reserved.
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