Abstract
Zirconium tin titanate (Zr 0.8 Sn 0.2 TiO 4 , ZST) thin films were deposited along the (100) index on a p-type Si substrate by a modified sol-gel method. The effects of film thickness on the crystalline structure and electrical property of the ZST films were investigated. X-ray diffraction confirmed a pronounced preferred orientation in thinner films and a polycrystalline structure in thicker films. The relationship between the leakage current densities and different crystalline structures is discussed. The leakage current densities of the prepared ZST films were below 10 -7 A/cm 2 at 3 MV/cm, which were sufficiently small to be a candidate for application in dynamic random-access memory (DRAM).
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