Abstract
We present the effect of postannealing on the crystallization of low-temperature-grown (LTG) InxGa1−xAs on a (001) InP substrate. LTG In0.42Ga0.58As with a thickness of 1.0 µm was grown directly on the substrate by molecular beam epitaxy at 180 °C. High-resolution X-ray diffraction reciprocal space mapping and cross-sectional transmission electron microscopy (TEM) indicate that the as-grown LTG-In0.42Ga0.58As layer comprises an amorphous layer above the substrate and a columnar crystal layer on top of the amorphous layer. The TEM images indicate that the thermally induced crystallization of the amorphous In0.42Ga0.58As crystal lattice-matched to the InP substrate occurs during annealing above 400 °C.
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