Abstract
The results of studying the effect of thermal and laser annealing on the distribution profiles of phosphorus and boron atoms in Si(111), implanted with different energies and radiation doses, are presented. It is demonstrated that an almost uniform distribution of impurity atoms can be obtained in the near-surface region of Si(111) by means of high-dose ion implantation and thermal and laser annealing. By the phased ion implantation of P+ and B+ into different sides of Si(111) with a gradual decrease in energy and radiation dose, p–i–n structures with a controlled thickness of the p and n regions are obtained, which is of great practical importance in the establishment of various device structures.
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