Abstract
The photoluminescence spectra and formation of the complex defects in the Cl doped CdTe p-type layers are investigated. It is supposed that at low Cl concentration complex defects TeiClTe and VCdClTe are responsible for the low p-type resistivity in CdTe. At higher Cl concentration formed neutral complexes Tei2ClTe and VCd2ClTe increased the p-type resistivity. At high Cl concentration excess ClTe caused a high resistivity and photoconductivity of CdTe. It is proposed that Tei and complex defects with Tei caused the 1.4eV PL band quenching and the 1.0eV PL band formation. The unstable 1.25eV PL band is supposed to be due to VCd-VTe pair. Acceptor impurities in initial material as Cu and its complexes can increase the p-type resistivity value in CdTe: Cl.
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