Why shallow defect levels alone do not cause high resistivity in CdTe

Abstract

It is usually assumed that deep defect levels are responsible for the high resistivity in detector-grade CdTe, however, it has been recently reported that shallow defects alone can explain high resistivity. In order to resolve this contradiction we analyze different high-temperature compensation regimes and we particularly show that donor–acceptor self-compensation is not a sufficient condition for high resistivity. We also analyze the dependence of the Fermi level on shallow donor concentration at both high temperature and room temperature using analytical solution of the charge neutrality equation and the graphical method based on the formation energy diagrams. We derive the limits of the high-temperature Fermi level values that lead to the high resistivity at room temperature in a system with shallow defect levels only and find that it is theoretically possible to obtain high resistivity using only shallow defects, but only under an extremely narrow range of physical parameters that is unlikely to occur in practice. Finally, we show that the transition levels of cadmium vacancy acceptor are not deep enough to provide high resistivity.