Effect of the temperature and doping on electron transport in AlxGa1−xN alloy by monte carlo method

Abstract

Compounds III element nitrides, particularly GaN, AlN and their alloys are materials prominent in the world of optoelectronics because they have a direct band gap and relatively large compared to other semiconductors, which makes them possible to generate light in the visible and ultraviolet spectrum. Therefore, we have a wide range of possibilities for optical applications. Despite a breakthrough in the field of devices, much remains to be done in terms of fundamental physics of these systems. We propose to study the alloy based on these materials, we simulate the behavior of electrons in AlxGa1-xN alloy, using the most simulation method appropriate for this type of calculation: the method of Monte Carlo. In fact, we use it to study the evolution of the velocity versus electric field by changing the percentage of aluminum in the alloy, between x = 0 (GaN) and x = 1 (AlN). We also calculate the electrons velocity by changing the temperature between 77 K and 1000 K, we change also the concentration of electrons (doping) between 1016cm−3 and 1018cm−3.