Abstract
We investigate the effect of the synthetic antiferromagnetic polarizer layer rigidness on the switching current density of spin transfer torque magnetic tunneling junction with micromagnetic simulations. In contrary to the general belief, surprisingly, the rigidness of the polarizer layer affects to the spin dynamics of the free layer and it causes the switching current density changes. When the rigidness of the synthetic antiferromagnetic polarizer layer is weakened by reducing the interlayer exchange coupling energy, we found that the switching current density can be reduced due to the more effective switching process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.