Combined Effects of Stray Field and Dzyaloshinskii–Moriya interaction on Magnetic Tunnel Junction with Stepped and Pillar Structures

Abstract

It is a matter of debate whether a pillar or a stepped structure better retains magnetic tunnel junctions’ (MTJs) performance while scaling down. In this work we use micromagnetic simulation to model the scaling effects on the free-layer’s stray-field (Hstray) for the two MTJ structures. The model was built on an MTJ containing a synthetic ferromagnetic (SyF) layer (free-layer/MgO/reference-layer) and a synthetic antiferromagnetic (SyAF) layer (reference-layer/Ru/hard-layer). Approximate Hstray strength is obtained in both structures with a free-layer of ~ 100nm. However, upon size reduction the Hstray raises significantly in the pillar structure, but it appears less responsive in the stepped structure. This trend is shared by experimental results with the MTJ reduced from 130 to 80 nm. We are suggested that the stepped structure is a more promising candidate on mitigating Hstray in pursuit of high density MRAM [1]. The combined effects of Hstray and Dzyaloshinskii–Moriya interaction (DMI) on switching current density (Jc) were also calculated for a 30 nm free-layer MTJ. The in-plane Hstray appears to interact with the DMI in a complementary or a competing manner, depending on the sign of the DMI and initial switching state (parallel or antiparallel) of the MTJ. The stepped structure is able to reduce Jc more effectively than the pillar case. This is due to strong mediation from the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction of the SyAF layer in the stepped structure.