Abstract
The analytical and production tools available to a process engineer on PI9000/9200 high current implanters, to overcome charging, are discussed. A selection of device results are presented. A correlation of in situ charge monitoring system with device yield/test structure breakdown voltage is demonstrated. The effect on advanced device probe yields and reliability measurements are investigated. It is found that devices up to 4 MB DRAM and 1 MB SRAM, show a flat probe yield response to electron flood gun emission current. It is shown that the device lifetime testing yield can be affected by over-flooding.
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