Abstract
The 2D to 3D growth transition of stacked submonolayer (SML) InAs/GaAs nanostructures as a function of the number of SML InAs stacks is investigated by atomic force microscopy (AFM) measurements. It is found that critical amount of InAs per cycle decreases as the number of stacks increases. These results are analyzed in context of the balance between the average In content and the total deposited thickness in the SML stack.
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