Abstract
Thin films of SrBi 4Ti 4O 15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 °C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P r and a coercive field E c values of 5.1 μC/cm 2 and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 μC/cm 2 and 85 kV/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10 10 switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories.
Published Version
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